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| Fuji Discrete Package IGBT n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Minimized Internal Stray Inductance n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25C) Symbols VCES VGES DC Tc= 25C IC 25 Collector Current DC Tc=100C IC 100 1ms Tc= 25C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg n Equivalent Circuit Ratings 600 20 13 5 52 50 25 +150 -40 +125 Units V V A W W C C * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE= 20V VGE=20V IC=5mA VGE=15V IC=5A VGE=0V VCE=10V f=1MHz VCC=300V IC=5A VGE=15V RG=330 VCC=300V IC=5A VGE=+15V RG=33 IF=5A VGE=0V IF=5A, VGE=-10V, di/dt=100A/s Min. Typ. Max. 1.0 20 8.5 3.0 Units mA A V pF 1.2 0.6 1.0 0.35 0.16 0.11 0.30 0.35 3.0 300 5.5 400 85 15 Turn-on Time Switching Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time s s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. Max. 2.50 5.00 Units C/W Collector Current vs. Collector-Emitter Voltage 12 T j= 2 5 C 12 Collector Current vs. Collector-Emitter Voltage T j= 1 2 5 C 10 V GE= 2 0 V , 1 5 V 12V V GE = 2 0 V , 1 5 V 10 [A] 8 [A] 12V 8 C Collector Current : I 6 Collector Current : I C 6 10V 4 4 10V 2 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] 2 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 T j= 2 5 C 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 1 2 5 C [V] 10 [V] CE 10 CE Collector-Emitter Voltage : V 6 Collector-Emitter Voltage : V 8 8 6 4 IC = 10A 5A 2.5A 4 IC = 10A 5A 2.5A 2 2 0 0 5 10 15 20 25 0 0 5 10 15 20 25 Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current V CC = 3 0 0 V , R G= 3 3 , V GE = 1 5 V , T j= 2 5 C 1000 1000 Switching Time vs. Collector Current V CC = 3 0 0 V , R G = 3 3 , V GE = 1 5 V , T j= 1 2 5 C t off , t r, t off , t f [nsec] , t r, t off , t f [nsec] t off tf t on tf t on 100 on Switching Time : t Switching Time : t on 100 tr tr 10 0 2 4 6 8 10 10 0 2 4 6 8 10 Collector Current : I C [A] Collector Current : I C [A] Switching Time vs. R G V CC =300V, I C = 5 A , V GE = 1 5 V , T j= 2 5 C Switching Time vs. R G V CC =300V, I C = 5 A , V GE = 1 5 V , T j= 1 2 5 C , t r, t off , t f [nsec] 1000 , t r, t off , t f [nsec] 1000 t off tf t on 100 tr t off t on on Switching Time : t 100 tr 10 0 50 100 150 200 250 300 350 G a t e R e s i s t a n c e : R G [ ] Switching Time : t tf on 10 0 50 100 150 200 250 300 350 G a t e R e s i s t a n c e : R G [ ] Capacitance vs. Collector-Emitter Voltage T j= 2 5 C 1000 500 Dynamic Input Characteristics T j= 2 5 C 25 C ies , C res , C ies [pF] [V] CE 100 Collector-Emitter Voltage : V Capacitance : C oes C oes 300 15 200 10 10 C res 100 5 1 0 5 10 15 20 25 30 35 0 0 5 10 15 Gate Charge : QG 20 [nQ] 25 0 30 Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , -di Reverse Recovery Current vs. Forward Current V R= 2 0 0 V , -di 150 / dt= 1 0 0 A / s e c 5 / dt = 1 0 0 A / s e c [nsec] [A] 4 125C 100 Reverse Recovery Time : t Reverse Recovery Current : I 125C rr rr 3 25C 2 50 25C 1 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Forward Current : I F [A] Forward Current : I F [A] Gate-Emitter Voltage : V GE [V] 400 V C C =200V, 300V, 400V 20 Reverse Biased Safe Operating Area + V GE = 1 5 V , - V GE <1 5 V , T j<1 2 5 C , R G >33 12 80 Typical Short Circuit Capability V CC = 4 0 0 V , R G = 33 , T j= 1 2 5 C 80 10 t SC I SC [A] [A] 8 SC Short Circuit Current : I Collector Current : I 6 40 40 4 20 20 2 0 0 100 200 300 400 500 600 700 0 5 10 15 20 [V] Gate Voltage : V GE 0 25 Collector-Emitter Voltage : V CE [V] Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 12 T j= 1 2 5 C 2 5 C 200 I rr I F = 5 A , T j= 1 2 5 C -di / dt 8 [nsec] 10 150 6 [A] 6 100 4 4 50 t rr 0 2 2 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0 100 200 -di 300 [A/sec] 400 0 500 Forward Voltage : V F [V] / dt Transient Thermal Resistance Thermal Resistance : Rth(j-c) [C/W] 10 1 FWD 10 0 IGBT 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 P u l s e W i d t h : P W [sec] P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com Reverse Recovery Current : I 8 Reverse Recovery Time : t Forward Current : I F rr rr [A] Short Circuit Time : t SC C [s] 60 60 |
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